Gallium nitride (GaN) power devices are redefining the limits of switching converters by combining wide bandgap physics with lateral HEMT structures optimized for fast, low-loss operation. This ...
This infographic outlines the background, methodologies, and results of this study, which advances our knowledge of materials for ultra-low-power ferroelectric memory devices. Researchers synthesize ...
Stanley Electric has been granted a patent for group-III nitride nanoparticles that improve luminous efficiency by preventing strains on the nanoparticles. The nanoparticles have a unique structure, ...
Researchers at Fraunhofer IAF have succeeded in growing AlYN/GaN heterostructures in a MOCVD reactor on 4-inch SiC substrates. Aluminum Yttrium Nitride (AlYN) has attracted the interest of many ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results